As semiconductor device geometries continue to scale down, evaluating Electrical Overstress (EOS) and surge robustness at the earliest stages of manufacturing is more critical than ever. To help engineers accurately assess device reliability before packaging, we have published a comprehensive test report detailing how to leverage our LVS (Low Voltage Surge) I-V Curve Testing System for precise, both package level and wafer-level characterization.
If you are familiar with standard Transmission Line Pulse (TLP) testing, our LVS methodology applies that same proven, incremental-pulse philosophy to high-energy surge transients. Instead of nanosecond-level ESD pulses, this system utilizes the standard industry 8/20µs lightning surge waveform to evaluate the DUT (Device Under Test) directly on the wafer.
By utilizing a stepped-pulse testing sequence, the LVS system provides deep insights into device behavior under high-stress conditions. Key highlights of the testing methodology include:
TLP-Style I-V Curve Extraction: The system incrementally steps up the 8/20µs surge energy, capturing the dynamic voltage and current at each level to plot a complete, high-resolution I-V curve of the protective device.
Automated Leakage Evolution: Just like in advanced TLP testing, the system automatically applies a DC bias to measure the leakage current before and after every single surge pulse.
Precise Failure Determination: By continuously monitoring the pre- and post-pulse leakage evolution, the system instantly detects when the DUT has sustained damage, accurately pinpointing the exact failure threshold (Peak Current/Voltage) based on your custom Pass/Fail criteria.
Wafer-Level Optimization: Designed to seamlessly integrate with probe stations, this setup allows designers to debug and optimize surge protection structures (such as TVS or SCRs) directly on the silicon.
Read the full test report below to learn how to configure the hardware setup, define the test parameters, and analyze the resulting I-V and leakage data to ensure your devices meet the highest industry reliability standards.
by Micheal Reardon, Wei Huang, Yingjie Gan