Tag: CC-TLP

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TR007 Low Voltage Surge (LVS) IV Curve Test Report

Download or View in PDF: TR007_ Characterizing Wafer-Level Surge Robustness: Advanced 8/20µs LVS I-V Curve Testing

As semiconductor device geometries continue to scale down, evaluating Electrical Overstress (EOS) and surge robustness at the earliest stages of manufacturing is more critical than ever. To help engineers accurately assess device reliability before packaging, we have published a comprehensive test report detailing how to leverage our LVS (Low Voltage Surge) I-V Curve Testing System for precise, both package level and wafer-level characterization.

If you are familiar with standard Transmission Line Pulse (TLP) testing, our LVS methodology applies that same proven, incremental-pulse philosophy to high-energy surge transients. Instead of nanosecond-level ESD pulses, this system utilizes the standard industry 8/20µs lightning surge waveform to evaluate the DUT (Device Under Test) directly on the wafer.

By utilizing a stepped-pulse testing sequence, the LVS system provides deep insights into device behavior under high-stress conditions. Key highlights of the testing methodology include:

  • TLP-Style I-V Curve Extraction: The system incrementally steps up the 8/20µs surge energy, capturing the dynamic voltage and current at each level to plot a complete, high-resolution I-V curve of the protective device.

  • Automated Leakage Evolution: Just like in advanced TLP testing, the system automatically applies a DC bias to measure the leakage current before and after every single surge pulse.

  • Precise Failure Determination: By continuously monitoring the pre- and post-pulse leakage evolution, the system instantly detects when the DUT has sustained damage, accurately pinpointing the exact failure threshold (Peak Current/Voltage) based on your custom Pass/Fail criteria.

  • Wafer-Level Optimization: Designed to seamlessly integrate with probe stations, this setup allows designers to debug and optimize surge protection structures (such as TVS or SCRs) directly on the silicon.

Read the full test report below to learn how to configure the hardware setup, define the test parameters, and analyze the resulting I-V and leakage data to ensure your devices meet the highest industry reliability standards.

 

by Micheal Reardon, Wei Huang, Yingjie Gan

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New Product Release: EPM-VF2 20 ps Rise Time TLP Pulse Module

ESDEMC Technology LLC is excited to unveil the release of the stand-alone 20 ps Rise Time Pulse Module. The module delivers high-speed transmission line rectangular pulses with rise times of 30 ps (10–90%) and 20 ps (20–80%), enabling precise evaluation of advanced semiconductor devices. An example oscilloscope waveform measurement is shown below.

High-Speed Pulse Performance

The 20 ps rise time TLP pulse module has 50 Ω output impedance.  The default configuration provides a 500 ps pulse width, while other widths can be customized upon request to match specific test requirements. With its ultra-fast edge performance, the module is well-suited for Capacitively Coupled Transmission Line Pulse (CC-TLP) testing, as well as ESD sensitivity studies for high-frequency devices and circuits.

Flexible Integration with ES622

As an stand alone TLP pulse module, it integrates seamlessly with ESDEMC ES622 series TLP pulse generator, extending the platform’s capabilities for next-generation semiconductor research and reliability testing. The combination allows users to generate highly repeatable fast pulses for characterizing device behavior under realistic high-frequency stress conditions.

Applications

The 20 ps Rise Time Pulse Module addresses the needs of semiconductor engineers and researchers working on:

  • Wafer-level and package-level CC-TLP testing
  • ESD sensitivity testing of RF, high-speed, and advanced logic devices
  • Development of design guidelines and protection strategies for high-frequency circuits

By providing customizable pulse widths and ultra-fast rise times, the new module gives users greater flexibility in adapting their test environment to meet the evolving challenges of advanced semiconductor technologies.

ESDEMC Technology LLC,  a pioneering technology company, is committed to advancing the field of electronic components testing. With a focus on innovation, quality, and customer satisfaction, we continue to explore the future of semiconductor testing.

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TR006 Die level CC-TLP Test Report

CC-TLP head CC-TLP-1

Download or View in PDF: TR006_ Die Level CC-TLP Test Report

This report documents the CC-TLP (Charged Device Model – Transmission Line Pulse) testing performed on Die B at the die level. The purpose of this test is to evaluate the ESD (Electrostatic Discharge) robustness of the device under test (DUT) by applying CC-TLP pulses at various current levels and monitoring the leakage current before and after each pulse.

 

by Keith Miller, Joey Fang, Jared Floyd, Yingjie Gan