ES660 ESD and Latch-UP Test System

The ES660 series ESD and LU Test system is a state-of-the-art, multi-pin automated testing equipment designed to meet the rigorous demands of modern semiconductor testing. This versatile device is engineered to seamlessly support the Human Body Model (HBM), Machine Model (MM), and Latch-Up testing, offering a comprehensive solution for assessing the reliability and robustness of integrated circuits (ICs) and electronic components.

With the capability to support up to 1024 pins, the ES660-P1 is ideal for testing complex ICs and electronic components with a multitude of connections. Its high pin count capacity ensures that one can evaluate large-scale devices with precision and efficiency, reducing testing time and enhancing productivity.

For higher pin count, model ES660-P2 (up to 2048 pins) is on the development roadmap.

Features

  • Compatibility with Multiple Testing Methods & Standards
  • Highly Flexible Bias and Pin Count Configuration Capability
  • Automated Testing Efficiency
  • Advanced Control and Monitoring
  • Leakage & DC Sweep
  • Data Analysis

Applications

  • Semiconductor device ESD testing
  • HBM module meets ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002
  • MM module meets ANSI/ESDA SP5.2
  • Latch-up option meets JEDEC JESD78
  • Transient Latch-up pending for ANSI/ESD SP5.4.1

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Description

1. Introduction

The ES660 series ESD and LU Test system is a state-of-the-art, multi-pin automated testing equipment designed to meet the rigorous demands of modern semiconductor testing. This versatile device is engineered to seamlessly support the Human Body Model (HBM), Machine Model (MM), and Latch-Up testing, offering a comprehensive solution for assessing the reliability and robustness of integrated circuits (ICs) and electronic components.

With the capability to support up to 1024 pins, the ES660-P1 is ideal for testing complex ICs and electronic components with a multitude of connections. Its high pin count capacity ensures that one can evaluate large-scale devices with precision and efficiency, reducing testing time and enhancing productivity.

For higher pin count, model ES660-P2 (up to 2048 pins) is on the development roadmap.

2. Features

  • Compatibility with Multiple Testing Methods & Standards
  • Highly Flexible Bias and Pin Count Configuration Capability
  • Automated Testing Efficiency
  • Advanced Control and Monitoring
  • Leakage & DC Sweep
  • Data Analysis

3. Applications

  • Semiconductor device ESD testing
  • HBM module meets ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002
  • MM module meets ANSI/ESDA SP5.2
  • Latch-up meets JEDEC JESD78
  • Transient Latch-up pending for ANSI/ESD SP5.4.1-2022

4. Specifications

ES660-P1 Base Unit

Parameters ES660-P1 Unit Comments
Touch Screen 5 inch
Dimensions 480 X 497.5 X 265 mm
Weight 28 kg Full installation
ESD and LU Waveform Optional Passive voltage and current probes  
Supported Oscilloscope Majority models from Keysight, Tektronix, LeCroy, Rigol, Customizable
Supported SMU Majority models from Keysight, Tektronix, LeCroy, Rigol, Customizable
Supported PSU Majority models from Keysight, Tektronix, LeCroy, Rigol. Customizable

HBM Human Body Model Option

(ANSI/ESDA/JEDEC JS-001-2023)

Parameters ES660-P1-HBM8 ES660-P1-HBM10 Unit Comments
Output voltage ±10 ~ 8000 ±10 ~ 10000 V
Discharge RC Value C: 100 pF ± 10%, R: 1.5kΩ ± 1%
Short Load Peak Current Ips 0.67 ± 10 % per kV A
Short Load Rise Time trs 2 < trs < 10 ns
Short Load Decay Time tds 130 < tds < 170 ns
Short Load Ringing trs < 15% of Ips
500 Load Peak Current Ipr Ipr/Ips ≥ 63%
500 Load Rise Time trr 5 < trr < 25 ns

MM Machine Model Option

(ANSI/ESD SP5.2-2019)

Parameters ES660-P1-MM2 ES660-P1-MM4 Unit Comments
Output Voltage ±10 ~ 2000 ±10 ~ 4000 V
Discharge RC Value C: 200 pF, R: 0 Ω
Short Load Peak Current Ip1 1.75±10% per 100V A
Short Load Ip2 67% ~ 90% of Ip1 A
Short Load Pulse Period tpm 66 < tpm < 90 ns
500 Ω Load Peak Current Ipr 0.85 – 1.2 A @400V condition per standard
500 Ω Load I100 0.23 – 0.4 A @400V condition per standard

LU Latch-Up Option

(JEDEC JESD78F.01)

Parameters ES660-P1-LU Comments
Preconditioning Vectors ≥ 20 MHz, 256K Depth External Setup
V/I 4-wire Kelvin Measurements Y
DUT V/I Bus Supplies 3+1, 5+1, 7+1
LU Waveform Capture Y

TLU Transient Latch-Up Option

(ANSI/ESD SP5.4.1)

Hardware-supported for Latch-Up Transient Pulse Source:

TLP, vf-TLP, EOS, MM

software on the roadmap.

5. Ordering Information

Line Part # or Option # Description
Base Unit Options
1.1 ES660-P1-BU Relay Based HBM/MM/LU ATE System Base unit
1.2 ES660-P1-HBM8 Human Body Model capability up to 8 kV
1.3 ES660-P1-HBM10 Human Body Model capability up to 10 kV
1.4 ES660-P1-MM2 Machine Model capability up to 2 kV
1.5 ES660-P1-MM4 Machine Model capability up to 4 kV
1.6 ES660-P1-LU Latch-up capability (Software)
1.7 ES660-P1-TLU Transient Latch-up capability (Software)
Relay Card with Bias Options
2.1 ES660-P1-R64B4 Expansion Relay Card for additional 64 Pin, 4 Bias
2.2 ES660-P1-R64B6 Expansion Relay Card for additional 64 Pin, 6 Bias
2.3 ES660-P1-R64B8 Expansion Relay Card for additional 64 Pin, 8 Bias
DC & Leakage & LU Pulse Source Options
3.1 ES660-PSMU2 Leakage\DC\LU Source: Dual Channels Pulsed SMU (210V/1.5A)
3.2 ES660-SMU1 Leakage\DC Source: Single Channel SMU (200V/1A)
3.3 ES660-PSU1 DC Source: Flex Channels PSU (30V/3A X 2 Ch, or 60V/3A X 1 Ch)
3.4 ES660-PSU2 DC Source: 3-Channels PSU (60V/3A X 2 Ch, 5V/3A X 1 Ch)
3.4 ES660-PSU3 DC Source: High Current PSU (20V/20A X 1 Ch)
Test Socket Options
4.1 ES660-P1-DS512 DUT Socket PCB 512 Pin
4.2 ES660-P1-DS1024 DUT Socket PCB 1024 Pin
4.3 ES660-P1-DSC1 DUT Socket PCB Customized Pin Count
Oscilloscope Options
5.1 MISC-OSC1 Digital Oscilloscope (1 GHz, 5 GS/s, 4 Ch)
5.2 CT-T03-1p0 Broadband Current Probe, 1V/A, 2kHz – 2GHz

Documents

ES660 Automated Probing System Datasheet (PDF)