Description
1. Description
ESDEMC’s EM601-6 is a DC-6 GHz IC Stripline TEM Cell which generates the electromagnetic field for testing small devices such as IC’s, wireless communication modules, etc. An external test signal applied through the input port of the EM601 generates a consistent and predictable TEM test field inside the cell. The radiation field from a device transmitting in the Cell can also be detected through the port using a test receiver.
The unique compact and economical design is optimized for medium accuracy measurements beyond the standard TEM Cell frequency range. The operation principle of EM601-6 is essentially the same as a TEM Cell. The E-H field inside the test volume is proportional to the input voltage and inversely proportional to the cell height. If a radiating object is inserted inside the cell, the radiated wave moving toward the input port is guided by the transmission line and picked up at the input with a receiver such as a spectrum analyzer. With this method, the RFI from a radiating Device can be measured quantitatively. Since this apparatus is very broadband, it has many applications in the area of EMI, EMS, receiver sensitivity test, etc.
2. Features:
- Up to 6 GHz bandwidth (Beyond normal TEM Cell bandwidth of 1 GHz)
- Can handle up to 5 kV high voltage pulse for Transient Field Injection Test
3. Applications:
- Electromagnetic immunity testing for integrated circuits
- Electromagnetic radiation testing for integrated circuits
- ESD/Surge field susceptibility testing for integrated circuits
- Designed to meet requirements of the following standards:
- IEC 61967-2
- IEC 61967-8
- IEC 62132-2
- IEC 62132-8
4. Specifications:
Frequency range | DC – 6 GHz (First spike by undesired higher order mode > 6 GHz) |
TEM Cell Impedance | 50Ω ± 5% nominal |
VSWR | DC- 3 GHz <1.2 3 – 6 GHz <1.5 |
Insertion Loss (S21) | DC- 6 GHz <1 dB |
Return Loss (S11 & S22) | DC- 3 GHz >20 dB 3 – 5 GHz >14 dB 5 – 6 GHz >10 dB |
Effective Cell Height | 12.5 mm |
E-Field Strength at Center of Cell | 80 V/m @ 1V (max 12.5 kV/m @ 500 W-rms, 400 kV/m @ 5 kV pulse)
Requires only 0.3125 mW input power to achieve 10 V/m E-field, or 3.125 W to achieve 1000 V/m |
H-Field Strength at Center of Cell | = E-Field Strength /377 (A/m) |
RF Connectors | N-Type |
Maximum Input Power | 500 W-rms, 57 dBm |
Maximum Input Voltage | 150 V-rms, 5kV TLP pulse |
DUT Port Dimension | 50 (W) x 50 (D) mm |
Recommended MAX DUT Dimensions | 30 (W) x 30(W) x 3(H) mm |
TEM Cell Dimensions | 170 (W) x 120 (D) x 70 (H) mm; 6.5 (W) x 4.5 (D) x 1 in. |
Weight | Approx 1 kg; 2 lbs. |