Description
1.Description
ESDEMC’s EM601-6 is a DC-6 GHz IC Stripline TEM Cell which generates the electromagnetic field for testing small devices such as IC’s, wireless communication modules, etc. An external test signal applied through the input port of the EM601 generates a consistent and predictable TEM test field inside the cell. The radiation field from a device transmitting in the Cell can also be detected through the port using a test receiver.
The unique compact and economical design is optimized for medium accuracy measurements beyond the standard TEM Cell frequency range. The operation principle of EM601-6 is essentially the same as a TEM Cell. The E-H field inside the test volume is proportional to the input voltage and inversely proportional to the cell height. If a radiating object is inserted inside the cell, the radiated wave moving toward the input port is guided by the transmission line and picked up at the input with a receiver such as a spectrum analyzer. With this method, the RFI from a radiating Device can be measured quantitatively. Since this apparatus is very broadband, it has many applications in the area of EMI, EMS, receiver sensitivity test, etc.
2.Features:
- Up to 6 GHz bandwidth (Beyond normal TEM Cell bandwidth of 1 GHz)
- Can handle up to 5 kV high voltage pulse for Transient Field Injection Test
3.Applications:
- Electromagnetic immunity test of IC
- Electromagnetic radiation test of IC
- ESD Field susceptibility test of IC
- IEC 61967-2:2005 Integrated circuits – Measurement of electromagnetic emissions, 150 kHz to 1 GHz – Part 2: Measurement of radiated emissions – TEM cell and wideband TEM cell method
- IEC 61967-8:2011 Integrated circuits – Measurement of electromagnetic emissions, 150 kHz up to 3 GHz – Part 8: Measurement of radiated emissions – IC stripline method
- IEC 62132-8:2012 Integrated circuits – Measurement of electromagnetic immunity, 150 kHz up to 3 GHz – Part 8: Measurement of radiated immunity – IC stripline method
- SAE 1752-3 Measurement of Radiated Emissions from Integrated Circuits — TEM/Wideband TEM (GTEM) Cell Method; TEM Cell (150 kHz to 1 GHz), Wideband TEM Cell (150 kHz to 8 GHz)
4.Specifications:
Frequency range | DC – 6 GHz (First spike by undesired higher order mode > 6 GHz) |
TEM Cell Impedance | 50Ω ± 5% nominal |
VSWR | DC- 3 GHz <1.2 3 – 6 GHz <1.5 |
Insertion Loss (S21) | DC- 6 GHz <1 dB |
Return Loss (S11 & S22) | DC- 3 GHz >20 dB 3 – 5 GHz >14 dB 5 – 6 GHz >10 dB |
Effective Cell Height | 12.5 mm |
E-Field Strength at Center of Cell | 80 V/m @ 1V (Maximum 240 kv/m static or 400 kv/m transient)
Requires only 0.3125 mW input power to achieve 10 V/m E-field, or 3.125 W to achieve 1000 V/m. This is calculated based on 12.5 mm Septum to Wall Height. |
H-Field Strength at Center of Cell | = E-Field Strength /377 (A/m) |
RF Connectors | N-Type |
Maximum Input Power | 500 Watts |
Maximum Input Voltage | 3 kV @DC, 5kV @Pulse |
DUT Port Dimension | 50 (W) x 50 (D) mm |
Recommended MAX DUT Dimensions | 30 (W) x 30(W) x 3(H) mm |
TEM Cell Dimensions | 170 (W) x 120 (D) x 70 (H) mm; 6.5 (W) x 4.5 (D) x 1 in. |
Weight | Approx 1 kg; 2 lbs. |