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ES660 ESD and Latch-UP Test System
ES660 ESD an Latch-Up Test system with temperature control

ES660 ESD and Latch-UP Test System

The ES660 series ESD and LU Test system is a state-of-the-art, multi-pin automated testing equipment designed to meet the rigorous demands of modern semiconductor testing. This versatile device is engineered to seamlessly support Human Body Model (HBM), Machine Model (MM), Latch-Up (LU) and Transient Latch-Up (TLU) testing, offering a comprehensive solution for assessing the reliability and robustness of integrated circuits (ICs) and electronic components. The ES660 has a higher specification compared to the previous solution of ES612A + RE64 relay expansion module/ ES660-P1-EM1 ATE expansion module.

With the capability to support from 128 pins up to 1024/1280 pins and 10 buses, the ES660-P1 configuration is an ideal hardware solution for testing various ICs and electronic components that have numerous connections.

For higher pin count test demands, the ES660-P1 can be upgraded to the ES660-P2 configuration, which features a higher density base unit motherboard supporting up to 2560 pins and 12 buses.

The latest ES660 base unit and relay cards’ HV DC buses are rated up to 800+ V DC, standard voltage buses are up to 100 V DC, ESD and leakage paths are rated up to 1200+ V DC). This design allows HV DC and Latch-up test capability (e.g. up to ±300 V LU bias and stress).

The highly modular design ensures upgrade possibilities to future designs with higher pin counts and superior test capabilities. The system’s fast speed is achieved by pushing the performance of high/mid speed relays’ control timing to the best. The low parasitic performance is achieved with highly EMC optimized low parasitic PCB and mechanical architecture current return path (GND) design.

The excellent capacity of the ES660 guarantees the efficient evaluation of large-scale devices, reducing testing time and enhancing productivity.

Features

  • Highly flexible system configuration, expandable from 128 pin to 2560 pin, 1 bus to 12 buses
  • High stress specifications available, including 10 kV HBM, 4kV MM, 300 V/1A DC & LU Stress, 1100 V SMU Leakage
  • Low Parasitic relay-based HBM tester (Meet JS-001 2017 Annex B4, 2024 Annex C5 N=9 )
  • Fast ESD test speed (10 P/S and 15 P/S options available, 20+ P/S in development)
  • Compatibility with multiple ESD/LU/TLU testing methods & standards
  • LU Sources’ V & I waveforms can be captured and displayed in software (Multiple options, with or without oscilloscopes)
  • ESD IV waveforms can be software captured with external voltage and current probes
  • Optional Integration of Thermal Forcing Module (Options of RT to 200°C or -15 to 200 °C)
  • Optional Multi-Protocol Preconditioning Module allowing interactive behaviors during LU tests
  • 14-inch touch screen enables visualization of test progress and conditions
  • Transient latch up Setup available with TLP/EOS/Surge/etc…

Applications

  • Semiconductor device ESD testing
  • HBM module meets ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002
  • MM module meets ANSI/ESDA SP5.2
  • Latch-up option meets JEDEC JESD78
  • Transient Latch-up pending for ANSI/ESD SP5.4.1

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Description

1. Introduction

The ES660 series is a state-of-the-art, automated testing solution engineered to meet the rigorous reliability demands of modern, complex integrated circuits (ICs). Delivering a comprehensive suite of testing capabilities – including Human Body Model (HBM), Machine Model (MM), Latch-Up (LU), and Transient Latch-Up (TLU) – the ES660 significantly outperforms previous generations in capacity, speed, and signal integrity. The ES660 has a higher specification compared to the previous solution of ES612A + RE64 relay expansion module / ES660-P1-EM1 ATE expansion module.

Designed with a highly modular and future-proof architecture, the ES660 helps semiconductor labs eliminate bottlenecks when evaluating large-scale devices, reducing overall test time while ensuring uncompromising accuracy.

Key Architectural Advantages:
Massive Scalability: The ES660-P1 configuration easily handles complex ICs from 128 up to 1280 pins (10 buses). For extreme pin-count demands, the ES660-P2 upgrade unlocks a high-density motherboard supporting up to 2560 pins and 12 buses.
High-Voltage Design: Upgraded DC buses (rated up to 800+ V) and ESD/leakage paths (rated up to 1200+ V) robustly support advanced HV DC and Latch-up stress testing (e.g., up to ±300 V LU bias).

2. Features

  • Extreme Expansion Capacity: Highly flexible configuration scales seamlessly from 128 to 2560 pins and 1 to 12 buses
  • Industry-Leading Stress Specs: Unlocks powerful testing limits including 10 kV HBM, 4 kV MM, 300 V / 1A DC & LU stress, and 1100 V SMU leakage detection
  • Ultra-Low Parasitic Hardware: Relay-based architecture strictly meets JS-001 2017 (Annex B4) and 2024 (Annex C5 N=9) low-parasitic requirements
  • Blazing Fast Test Speeds: Drastically cuts testing time for high pin-count devices with 10 to 15 pins/second throughput (20+ P/S currently in development)
  • Oscilloscope-Free Waveform Visualization: Synchronously measure and save up to 16 channels of LU Voltage and Current waveforms (including Stress and DC buses) directly in the system. No external oscilloscope is required, significantly streamlining hardware setup and post-test failure analysis
  • Fully Integrated Thermal Control: Eliminate complex external hardware setups with a seamlessly integrated thermal forcing module. Monitor and set temperatures directly within the test software, which automatically triggers the test sequence the moment the target temperature is reached (Options: RT to 200°C or -15°C to 200°C)
  • Comprehensive Standard Coverage: A single unified platform fully compatible with all major industry standards for HBM, MM, LU, and TLU(TLP/EOS/Surge) testing
  • Smart LU Preconditioning: Optional multi-protocol preconditioning module enables complex, interactive IC state-setting during dynamic LU tests
  • Intuitive Touch Interface: Built-in 14-inch touchscreen provides instant visualization of test pr ogress, system conditions, and real-time alerts

3. Applications

  • Semiconductor device ESD testing
  • HBM module meets ANSI/ESDA/JEDEC JS-001, MIL-STD-883E, AEC Q100-002
  • MM module meets ANSI/ESDA SP5.2
  • Latch-up meets JEDEC JESD78
  • Transient Latch-up pending for ANSI/ESD SP5.4.1

4. Specifications

ES660 Base Unit

Parameters ES660-P1/P2 Unit Comments
Touch Screen 14 inch
Dimensions 60 X 62 X 117 cm ESDEMC Rack System
Weight 50 – 200 kg Depends on configuration
ESD and LU Waveform Optional Passive voltage and current probes  
Supported Oscilloscope Majority models from Keysight, Tektronix, LeCroy, Rigol Customizable
Supported SMU Selected models from Keysight, Tektronix, LeCroy, Rigol Customizable
Supported PSU Selected models from Keysight, Tektronix, LeCroy, Rigol, etc Customizable

HBM Human Body Model Option

(ANSI/ESDA/JEDEC JS-001)

Parameters ES660-Px-HBM4 ES660-Px-HBM8 ES660-Px-HBM10 Unit Comments
Output voltage ±10 ~ 4000 ±10 ~ 8000 ±10 ~ 10000 V
Minimum voltage step 1 V
Discharge RC Value C: 100 pF ± 10%, R: 1.5kΩ ± 1%
Short Load Peak Current Ips 0.67 ± 10 % per kV A
Short Load Rise Time trs 2 < trs < 10 ns
Short Load Decay Time tds 130 < tds < 170 ns
Short Load Ringing trs < 15% of Ips
500 Ω Load Peak Current Ipr Ipr/Ips ≥ 63%
500 Ω Load Rise Time trr 5 < trr < 25 ns
Max Pulse Rate /Pulse Module 10 Standard, 15 Optional P/S
Number of simultaneous pulses >=8 >512pin
Low parasitic HBM per 2024 Annex C5 N = 9 With low parasitic fixture

MM Machine Model Option

(ANSI/ESD SP5.2)

Parameters ES660-Px-MM2 ES660-Px-MM4 Unit Comments
Output Voltage ±10 ~ 2000 ±10 ~ 4000 V
Minimum voltage step 1 V
Discharge RC Value C: 200 pF, R: 0 Ω
Short Load Peak Current Ip1 1.75±10% per 100V A
Short Load Ip2 67% ~ 90% of Ip1 A
Short Load Pulse Period tpm 66 < tpm < 90 ns
500 Ω Load Peak Current Ipr 0.85 – 1.2 A @400V condition per standard
500 Ω Load I100 0.23 – 0.4 A @400V condition per standard
Max Pulse Rate /Pulse Module 10 P/S
Number of simultaneous pulses >=8 >512pin

DC & Latch-Up Option

(JEDEC JESD78)

Parameters ES660-P1 BU ES660-P2 BU Comments
Preconditioning Vectors Up to ≥ 20 MHz, 256K/1M Depth Both Internal & External Options
Preconditioning Logic Levels 0.5 – 5V
V/I 4-wire Kelvin Method

Y
DUT V/I Bus Supplies 3+1, 5+1, 7+1 3+1, 5+1, 7+1, 9+1 Additional DC Sources, expansion available
LU Waveform Capture Y With LSP hardware
Relay Matrix Max V DC (V) 800
SSR Matrix Max V DC (V) 100
Max I DC (A) Per Pin 2
Max I DC (A) of DC Bus 15 10
Default LU Source Vmax (V) >= 100 >= 300 Limited to 1 A
Default LU Source Imax (A) >= 10 >= 10 Limited to 10 V

Note: The ES660 system has an additional DC path from the back panel to the TermA connection of each Pogopin. This path allows additional TLU/HV/DC characterization of the device with up to 1200V DC voltage.

TLU Transient Latch-Up Option

(ANSI/ESD SP5.4.1)

[Specifications pending finalization]
Scheduled Hardware-support for Latch-Up Transient Pulse Source:
ES622 (TLP/ VF-TLP), EOS-500 (EOS), LVS-500 (LVS), HBM, MM

5. Ordering Information

Line Part # or Option # Description Note
Base Unit Options
1.1 ES660-P1-BU Relay Based HBM/MM/LU ATE System Rack Unit, up to 1024 Pin, 10 DC
1.2 ES660-P2-BU Relay Based HBM/MM/LU ATE System Rack Unit, up to 2560 Pin, 12 DC
1.3 ES660-P0-EM1 Relay Based HBM/MM/LU ATE Expansion Module, (No Controller & HVPS) Requires External Controller such as ES612A/ES622A, relay card & function units, up to 512 Pin, 10 DC
1.4 ES660-HBM8-1 Add Human Body Model capability up to 8 kV
1.5 ES660-HBM10-1 Add Human Body Model capability up to 10 kV
1.6 ES660-MM2 Add Machine Model capability up to 2 kV
1.7 ES660-MM4 Add Machine Model capability up to 4 kV
1.8 ES660-LU Latch-Up Capability (Software and hardware package)
1.9 ES660-TLU Transient Latch-up capability (Software, require TLP/EOS)
1.10 ES660-MPPM-1 Multi-Protocol Precondition Module (External Module)
1.11 ES660-RC64VP1-256K Vectoring & Clock Pre-Conditioning Module of Relay Card. One module to one Relay Card, ≥20 MHz, 256K Depth
1.12 ES660-RC64VP1-1M Vectoring & Clock Pre-Conditioning Module of Relay Card. One module to one Relay Card, ≥20 MHz, 1M Depth
1.13 ES660-TFM1 Integrated Thermal Forcing Module (Room Temperature ~ 200 °C)
1.14 ES660-TFM2 Integrated Thermal Forcing Module (-15 ~ 200 °C)
1.15 ES660-TFMx Integrated Thermal Forcing System, Temperature Customized
Relay Card Options

(Special specification design is available per request)
2.1 ES660-P1-R64R1 Expansion Relay Card for additional 64 Pin, 1 Bias ESD Only
2.2 ES660-P1-R64R4 Expansion Relay Card for additional 64 Pin, 3+1 Bias
2.3 ES660-P1-R64R6 Expansion Relay Card for additional 64 Pin, 5+1 Bias
2.4 ES660-P1-R64B6-HV Expansion Relay Card for additional 64 Pin, 5+1 HV Bias (DC up to 800 V)
2.5 ES660-P1-R64R8 Expansion Relay Card for additional 64 Pin, 7+1 Bias
2.6 ES660-P1-R64B8-HV Expansion Relay Card for additional 64 Pin, 7+1 HV Bias (DC up to 800 V)
2.7 ES660-P2-R64R1 Expansion Relay Card for additional 64 Pin, 1 Bias ESD Only
2.8 ES660-P2-R64R4 Expansion Relay Card for additional 64 Pin, 3+1 Bias
2.9 ES660-P2-R64B8 Expansion Relay Card for additional 64 Pin, 7+1 Bias
2.10 ES660-P2-R64B8-HV Expansion Relay Card for additional 64 Pin, 7+1 HV Bias (DC up to 800 V)
2.11 ES660-P2-R64B10 Expansion Relay Card for additional 64 Pin, 9+1 Bias
2.12 ES660-P2-R64B12 Expansion Relay Card for additional 64 Pin, 11+1 Bias
DC & Leakage & LU Pulse Source Options
3.1 ES660-PSU-C2 Specialized HV HP DC Bias and Stress Source, leakage build-in:

Stress ±300 V/1 A, ±100 V/4 A, ±30 V/10 A; Bias 300 V/1 A

 HV LU
3.2 ES660-PSU-C3 DC Bias and Stress Source, leakage build-in:

Stress ±100 V/3 A; Bias 100 V/1 A
3.3 ES660-PSMU2 Leakage Source: Dual Channels Pulsed SMU (±210 V/3 A)
3.4 ES660-PSU1 DC Source: Flex Channels PSU with Max (32 V/3 A X 2Ch + 6 V/5 A X 1Ch, or 70 V/3 A X 1 Ch or 32 V/6 A X 1Ch)
3.5 ES660-PSU3 DC Source: High Current PSU (8 V/20 A or 20 V/10 A X 1Ch)
3.6 ES660-PSU6 DC Source: High Power PSU (350 V/2 A X 1Ch)
3.7 ES660-PSU6-1 DC Source: High Voltage PSU (300 V/1 A 1Ch)
3.8 ES660-PSU8 DC Source: High Power PSU (100 V/1 A X 1Ch)
3.9 ES660-PSU9 DC Source: High Power PSU (60 V/5 A X 1Ch)
3.10 ES660-PSU10 DC Source: High Power PSU (30 V/10 A X 1Ch)
3.11 ES660-PSU11-1 DC Source: Flex Range (150 V/10 A/500 W X 1Ch)
3.12 ES660-PSU12-1 DC Source: Flex Range (300 V/10 A/750 W X 1Ch)
Test Socket Options
4.1 ES660-P1-DS256 DUT Socket PCB 256 Pin
4.2 ES660-P1-DS512 DUT Socket PCB 512 Pin
4.3 ES660-P1-DS1024 DUT Socket PCB 1024 Pin
4.4 ES660-P1-DSC1 DUT Socket PCB Customized Pin Count
Waveform measurement Options
5.1 MISC-OSC350 Digital Oscilloscope (350 MHz, 4 Ch)
5.2 CT-T03-1p0 Broadband Current Probe, 1V/A, 2kHz – 2GHz

Note:

  1. Motherboards, matrix cards, waveform boards, and self-diagnostic boards are the standard configurations of the system, which are not mentioned in the order information.
  2. ES660-P1 configuration system can be smoothly upgraded to ES660-P2 configuration with modules upgrades. The ES660 system is a modular design that further upgrade to higher pin count than 2560 should also be possible.

Documents

ES660 ESD and Latch-UP Test System Datasheet (PDF)