Posted on

TS005 Characterization of TVS Diodes for ESD Protection Applications

Download Characterization of TVS Diodes for ESD Protection Applications (PDF)

TVS devices are designed to protect sensitive electronics from the damaging effects of electrostatic discharge (ESD). During normal operating conditions, TVS devices appear to be an open circuit (with small leakage current). Under stress conditions, these devices turn on, providing a low impedance path to the transient current. The voltage across the protected circuit is restricted to the clamp voltage of the TVS diode.

This technical slides introduced a typical methods to characterize TVS diodes:
1. VF-TLP characteristics:
(a) Transient waveforms; (b) IV curve & Turn on time; (c) Turn on voltage; (d) Dynamic resistance; (e) Clamping voltage; (f) Failure threshold
2. Effect on signal integrity
(a) Capacitance; (b) package inductance; (c) Insertion loss;
3. ESD generator contact mode behavior

ESDEMC_TS005%20Characterization%20of%20TVS%20Diodes%20for%20ESD%20Protection%20Applications
Posted on

TS015 Introduction of Transmission Line Pulse (TLP) for ESD Analysis and Applications

Download Introduction of Transmission Line Pulse (TLP) for ESD Analysis and Applications (PDF)

TS015 Technical slides is the updated version of TS010. In this version, the TLP test procedures and applications are more detailed introduces.

 

ESDEMC_TS015_Introduction%20of%20TLP%20for%20ESD%20Analysis%20and%20applications
Posted on

TS010 Introduction to RE Pre-Compliance Measurement with TEM Cell

Download Introduction to RE Pre-Compliance Measurement with TEM Cell (PDF)

Transverse-electromagnetic-mode (TEM) is an electromagnetic field pattern of radiation where both E and H fields are perpendicular to the direction of the radiation propagation.

A TEM Cell is an expanded coaxial transmission line (septum) that propagates TEM waves (within a cavity):
– E and H field are approximately uniform between the septum and cavity ceiling
– Approximately simulates a planar field in free space (377Ω far-field wave impedance)
– E field strength at the mid-point between the septum and cavity ceiling is related to the RF voltage between septum and cavity GND, and the septum to cavity ceiling height

The SAE J1752-3 standard defines a method for measuring EM radiation of an integrated circuit (IC) using a TEM Cell.
ESDEMC TEM Cell Products are specially designed to satisfy the requirements of the following standards:
▪ SAE J1752-3
▪ IEC 61967-8
▪ IEC 61967-2

Software solution is available for J1752-3 compliant RE testing and emissions level classification

 

ESDEMC_TS010_Introduction%20to%20RE%20Pre-Compliance%20Measurement%20with%20TEM%20Cell